It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
In this study, energetic Al/Ni superlattice was deposited by magnetron sputtering. A micro-plasma generator was fabricated using the energetic Al/Ni superlattice. The cross-sectional micro-structure of the energetic Al/Ni superlattice was scanned by transmission electron microscopy. Results show that the superlattice is composed of Al layer and Ni layers, and its periodic structure is clearly visible. Moreover, the bilayer thickness is about 25 nm, which consists of about 15 nm Al layer and 10 nm Ni layer. The micro initiator was stimulated using a 0.22 μF capacitor charged at 2900–4100 V. The electrical behaviors were investigated by testing the current-voltage waveform, and the plasma generation was explored by ultra-high-speed camera and photodiode. The integrated micro generator exhibited remarkable electrical exploding phenomenon, leading to plasma generations at a small timescale. The plasma outputs reflected by flyer velocities were superior to that with a much thicker bilayer of 500 nm Al/Ni multilayer. The higher flyer velocity combined with Gurney energy model confirmed the chemical reaction of the Al/Ni superlattice structure contributed to plasma production in comparison with the Al/Ni multilayers. Overall, the energetic Al/Ni superlattice was expected to pave a promising avenue to improve the initiator efficiency at a lower energy investment.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, China
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
3 Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, China