It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore’s Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a high-performance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.
Though designing conductive polymers for memory devices is attractive for future low-cost flexible electronics, a proof-of-concept device has yet to be realized. Here, the authors report a redox-gated polymer memristive processing unit with programmable multilevel storage and logic functionalities.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details


1 East China University of Science and Technology, Key Laboratory for Advanced Materials, Institute of Applied Chemistry, School of Chemistry and Molecular Engineering, Shanghai, China (GRID:grid.28056.39) (ISNI:0000 0001 2163 4895)
2 Shanghai Jiao Tong University, School of Chemistry and Chemical Engineering, Shanghai, China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293); Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, CAS Key Laboratory of Magnetic Materials and Devices, Ningbo, China (GRID:grid.458492.6) (ISNI:0000 0004 0644 7516); Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Linfen, China (GRID:grid.412498.2) (ISNI:0000 0004 1759 8395)
3 Shanghai Jiao Tong University, School of Chemistry and Chemical Engineering, Shanghai, China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293); Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, CAS Key Laboratory of Magnetic Materials and Devices, Ningbo, China (GRID:grid.458492.6) (ISNI:0000 0004 0644 7516)
4 Technische Universität Dresden, Center for Advancing Electronics Dresden (cfaed) & Department of Chemistry and Food Chemistry, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257)
5 Shanghai Jiao Tong University, School of Chemistry and Chemical Engineering, Shanghai, China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293); Technische Universität Dresden, Center for Advancing Electronics Dresden (cfaed) & Department of Chemistry and Food Chemistry, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257)
6 Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Linfen, China (GRID:grid.412498.2) (ISNI:0000 0004 1759 8395)
7 Northwestern Polytechnical University, Shaanxi Key Laboratory of Macromolecular Science and Technology, Department of Applied Chemistry, School of Science, Xi’an, China (GRID:grid.440588.5) (ISNI:0000 0001 0307 1240)
8 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, CAS Key Laboratory of Magnetic Materials and Devices, Ningbo, China (GRID:grid.458492.6) (ISNI:0000 0004 0644 7516)