Strain-engineering Mott-insulating La2CuO4

Abstract

The transition temperature T_c of unconventional superconductivity is often tunable. For a monolayer of FeSe, for example, the sweet spot is uniquely bound to titanium-oxide substrates. By contrast for La_2−xSr_xCuO₄ thin films, such substrates are sub-optimal and the highest T_c is instead obtained using LaSrAlO₄. An outstanding challenge is thus to understand the optimal conditions for superconductivity in thin films: which microscopic parameters drive the change in T_c and how can we tune them? Here we demonstrate, by a combination of x-ray absorption and resonant inelastic x-ray scattering spectroscopy, how the Coulomb and magnetic-exchange interaction of La₂CuO₄ thin films can be enhanced by compressive strain. Our experiments and theoretical calculations establish that the substrate producing the largest T_c under doping also generates the largest nearest neighbour hopping integral, Coulomb and magnetic-exchange interaction. We hence suggest optimising the parent Mott state as a strategy for enhancing the superconducting transition temperature in cuprates.

The optimal condition for superconductivity is a long-sought issue but remains challenging. Here, Ivashko et al. demonstrate that the compressive strain to La₂CuO₄ films enhances the Coulomb and magnetic-exchange interactions relevant for superconductivity, providing a strategy to optimise the parent Mott state for superconductivity.