Abstract

Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga2O3n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga2O3n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO2-Ga2O3n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light (λ = 254 nm) irradiation. The improvement of TiO2-Ga2O3n-p heterostructure capabilities is due to the development of the defects on Ga2O3-TiO2 interface, which were able to trap electrons faster.

Graphical Abstract

Details

Title
Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
Author
Xu, Hongyan 1 ; Han, Feng 1 ; Xia, Chengkai 1 ; Wang, Siyan 1 ; Ramachandran, Ranish M 2 ; Detavernier, Christophe 2 ; Wei, Minsong 3 ; Lin, Liwei 3 ; Zhuiykov, Serge 4   VIAFID ORCID Logo 

1  School of Materials Science and Engineering, North University of China, Taiyuan, People’s Republic of China 
2  Department of Solid State Science, Ghent University, Ghent, Belgium 
3  Berkeley Sensor and Actuator Center, Department of Mechanical Engineering, University of California, Berkeley, CA, USA 
4  School of Materials Science and Engineering, North University of China, Taiyuan, People’s Republic of China; Ghent University Global Campus, Incheon, South Korea 
Pages
1-10
Publication year
2019
Publication date
May 2019
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1186/s11671-019-2991-1
ProQuest document ID
2224864628
Copyright
Nanoscale Research Letters is a copyright of Springer, (2019). All Rights Reserved., © 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.