Abstract

Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO2, have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO2-based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 103, > 104 s, and > 10, respectively.

Details

Title
A Multi-level Memristor Based on Al-Doped HfO2 Thin Film
Author
Wu, Lei 1   VIAFID ORCID Logo  ; Liu, Hongxia 1 ; Li, Jiabin 1 ; Wang, Shulong 1 ; Wang, Xing 1 

1  Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an, China 
Pages
1-7
Publication year
2019
Publication date
May 2019
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1186/s11671-019-3015-x
ProQuest document ID
2231293909
Copyright
Nanoscale Research Letters is a copyright of Springer, (2019). All Rights Reserved., © 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.