Abstract

The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO2 triggered by nitridation. This study on the energy band engineering of MoS2/HfO2 heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.

Details

Title
Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces
Author
Ya-Wei, Huan 1 ; Wen-Jun, Liu 1   VIAFID ORCID Logo  ; Xiao-Bing, Tang 1 ; Xiao-Yong, Xue 1 ; Xiao-Lei, Wang 2 ; Qing-Qing Sun 1 ; Shi-Jin, Ding 1 

1  State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China 
2  Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China 
Pages
1-6
Publication year
2019
Publication date
May 2019
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1186/s11671-019-3020-0
ProQuest document ID
2231717278
Copyright
Nanoscale Research Letters is a copyright of Springer, (2019). All Rights Reserved., © 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.