Abstract

Tungsten-based monolayer transition metal dichalcogenides host a long-lived “dark” exciton, an electron-hole pair in a spin-triplet configuration. The long lifetime and unique spin properties of the dark exciton provide exciting opportunities to explore light-matter interactions beyond electric dipole transitions. Here we demonstrate that the coupling of the dark exciton and an optically silent chiral phonon enables the intrinsic photoluminescence of the dark-exciton replica in monolayer WSe2. Gate and magnetic-field dependent PL measurements unveil a circularly-polarized replica peak located below the dark exciton by 21.6 meV, equal to E″ phonon energy from Se vibrations. First-principles calculations show that the exciton-phonon interaction selectively couples the spin-forbidden dark exciton to the intravalley spin-allowed bright exciton, permitting the simultaneous emission of a chiral phonon and a circularly-polarized photon. Our discovery and understanding of the phonon replica reveals a chirality dictated emission channel of the phonons and photons, unveiling a new route of manipulating valley-spin.

The long lifetime and spin properties of dark excitons in atomically thin transition metal dichalcogenides offer opportunities to explore light-matter interactions beyond electric dipole transitions. Here, the authors demonstrate that the coupling of the dark exciton and an optically silent chiral phonon enables the intrinsic photoluminescence of the dark-exciton replica in monolayer WSe2

Details

Title
Emerging photoluminescence from the dark-exciton phonon replica in monolayer WSe2
Author
Li, Zhipeng 1   VIAFID ORCID Logo  ; Wang Tianmeng 2 ; Jin Chenhao 3   VIAFID ORCID Logo  ; Lu Zhengguang 4 ; Lian Zhen 2 ; Meng Yuze 5 ; Blei, Mark 6 ; Gao Shiyuan 7 ; Taniguchi, Takashi 8 ; Watanabe, Kenji 8   VIAFID ORCID Logo  ; Ren Tianhui 9 ; Tongay Sefaattin 6 ; Yang, Li 7 ; Smirnov Dmitry 10   VIAFID ORCID Logo  ; Cao Ting 11 ; Su-Fei, Shi 12   VIAFID ORCID Logo 

 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); Shanghai Jiao Tong University, School of Chemistry and Chemical Engineering, Shanghai, China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293) 
 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198) 
 Kavli Institute at Cornell for Nanoscale Science, Ithaca, USA (GRID:grid.5386.8) (ISNI:000000041936877X) 
 National High Magnetic Field Lab, Tallahassee, USA (GRID:grid.481548.4) (ISNI:0000 0001 2292 2549); Florida State University, Department of Physics, Tallahassee, USA (GRID:grid.255986.5) (ISNI:0000 0004 0472 0419) 
 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); Nanjing University, College of Physics, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X) 
 Arizona State University, School for Engineering of Matter, Transport and Energy, Tempe, USA (GRID:grid.215654.1) (ISNI:0000 0001 2151 2636) 
 Washington University in St. Louis, Department of Physics, St. Louis, USA (GRID:grid.4367.6) (ISNI:0000 0001 2355 7002) 
 National Institute for Materials Science, Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880) 
 Shanghai Jiao Tong University, School of Chemistry and Chemical Engineering, Shanghai, China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293) 
10  National High Magnetic Field Lab, Tallahassee, USA (GRID:grid.481548.4) (ISNI:0000 0001 2292 2549) 
11  Stanford University, Geballe Laboratory for Advanced Materials, Stanford, USA (GRID:grid.168010.e) (ISNI:0000000419368956); University of Washington, Department of Materials Science and Engineering, Seattle, USA (GRID:grid.34477.33) (ISNI:0000000122986657) 
12  Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); Rensselaer Polytechnic Institute, Department of Electrical, Computer & Systems Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198) 
Publication year
2019
Publication date
2019
Publisher
Nature Publishing Group
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2236156025
Copyright
© The Author(s) 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.