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Abstract
Tungsten-based monolayer transition metal dichalcogenides host a long-lived “dark” exciton, an electron-hole pair in a spin-triplet configuration. The long lifetime and unique spin properties of the dark exciton provide exciting opportunities to explore light-matter interactions beyond electric dipole transitions. Here we demonstrate that the coupling of the dark exciton and an optically silent chiral phonon enables the intrinsic photoluminescence of the dark-exciton replica in monolayer WSe2. Gate and magnetic-field dependent PL measurements unveil a circularly-polarized replica peak located below the dark exciton by 21.6 meV, equal to E″ phonon energy from Se vibrations. First-principles calculations show that the exciton-phonon interaction selectively couples the spin-forbidden dark exciton to the intravalley spin-allowed bright exciton, permitting the simultaneous emission of a chiral phonon and a circularly-polarized photon. Our discovery and understanding of the phonon replica reveals a chirality dictated emission channel of the phonons and photons, unveiling a new route of manipulating valley-spin.
The long lifetime and spin properties of dark excitons in atomically thin transition metal dichalcogenides offer opportunities to explore light-matter interactions beyond electric dipole transitions. Here, the authors demonstrate that the coupling of the dark exciton and an optically silent chiral phonon enables the intrinsic photoluminescence of the dark-exciton replica in monolayer WSe2
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1 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); Shanghai Jiao Tong University, School of Chemistry and Chemical Engineering, Shanghai, China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293)
2 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198)
3 Kavli Institute at Cornell for Nanoscale Science, Ithaca, USA (GRID:grid.5386.8) (ISNI:000000041936877X)
4 National High Magnetic Field Lab, Tallahassee, USA (GRID:grid.481548.4) (ISNI:0000 0001 2292 2549); Florida State University, Department of Physics, Tallahassee, USA (GRID:grid.255986.5) (ISNI:0000 0004 0472 0419)
5 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); Nanjing University, College of Physics, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X)
6 Arizona State University, School for Engineering of Matter, Transport and Energy, Tempe, USA (GRID:grid.215654.1) (ISNI:0000 0001 2151 2636)
7 Washington University in St. Louis, Department of Physics, St. Louis, USA (GRID:grid.4367.6) (ISNI:0000 0001 2355 7002)
8 National Institute for Materials Science, Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880)
9 Shanghai Jiao Tong University, School of Chemistry and Chemical Engineering, Shanghai, China (GRID:grid.16821.3c) (ISNI:0000 0004 0368 8293)
10 National High Magnetic Field Lab, Tallahassee, USA (GRID:grid.481548.4) (ISNI:0000 0001 2292 2549)
11 Stanford University, Geballe Laboratory for Advanced Materials, Stanford, USA (GRID:grid.168010.e) (ISNI:0000000419368956); University of Washington, Department of Materials Science and Engineering, Seattle, USA (GRID:grid.34477.33) (ISNI:0000000122986657)
12 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); Rensselaer Polytechnic Institute, Department of Electrical, Computer & Systems Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198)