Abstract

Van der Waals (vdW) heterodiodes based on two-dimensional (2D) materials have shown tremendous potential in photovoltaic detectors and solar cells. However, such 2D photovoltaic devices are limited by low quantum efficiencies due to the severe interface recombination and the inefficient contacts. Here, we report an efficient MoS2/AsP vdW hetero-photodiode utilizing a unilateral depletion region band design and a narrow bandgap AsP as an effective carrier selective contact. The unilateral depletion region is verified via both the Fermi level and the infrared response measurements. The device demonstrates a pronounced photovoltaic behavior with a short-circuit current of 1.3 μA and a large open-circuit voltage of 0.61 V under visible light illumination. Especially, a high external quantum efficiency of 71%, a record high power conversion efficiency of 9% and a fast response time of 9 μs are achieved. Our work suggests an effective scheme to design high-performance photovoltaic devices assembled by 2D materials.

Details

Title
High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
Author
Wu, Feng 1 ; Li, Qing 1 ; Wang, Peng 1 ; Xia, Hui 2 ; Wang, Zhen 2 ; Wang, Yang 2 ; Luo, Man 2 ; Long, Chen 3 ; Chen, Fansheng 2 ; Miao, Jinshui 4 ; Chen, Xiaoshuang 2 ; Lu, Wei 2 ; Chongxin Shan 5 ; Pan, Anlian 6 ; Wu, Xing 7   VIAFID ORCID Logo  ; Ren, Wencai 3   VIAFID ORCID Logo  ; Jariwala, Deep 8 ; Hu, Weida 9   VIAFID ORCID Logo 

1  State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China; University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, China 
2  State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China 
3  Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China 
4  State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA 
5  Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, China 
6  Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, and School of Physics and Electronics, Hunan University, Changsha, China 
7  School of Information Science and Technology, East China Normal University, Shanghai, China 
8  Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA 
9  State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China; University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, China; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China 
Pages
1-8
Publication year
2019
Publication date
Oct 2019
Publisher
Nature Publishing Group
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41467-019-12707-3
ProQuest document ID
2304114394
Copyright
© 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.