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Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna; Raj, Aditya; Hatui, Nirupam; Keller, Stacia; Mishra, Umesh. arXiv.org, Oct 14, 2019.You might have access to this document
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