Abstract

Fabrication of large-area devices with patternable nanostructures is important for practical applications in optical or electrical devices. In this work, we describe an easy and environment-friendly method for preparing large-area nano-dot (ND) arrays via the electrolytic reaction of a metal oxide film. NDs with various size and morphology can be obtained by adjusting the applied voltage, electrolysis time, and the film thickness of the indium tin oxide (ITO) layer. High-density NDs with size of 50–60 nm can be obtained by electrolysis of a 25-nm-thick ITO film at 150 V for 1.5 min under a water droplet medium, which have been applied for surface-enhanced Raman spectroscopy (SERS) after depositing a thin layer of silver. The SERS substrate with optimized ND structure exhibits sensitive detection of Rhodamine 6G (R6G) with detection limit down to 5 × 10-12 M. The enhancement factors (EFs) of 1.12 × 106 and 6.79 × 105 have been achieved for characterization of 4-methylbenzenethiol (4-MBT) and R6G, respectively. With an additional photolithographic step, multiple areas of ND arrays can be created on one substrate, enabling simultaneous detection of various samples containing different molecules at once experiment. Such a method is quick, easy, patternable, and environment-friendly, being suitable for on-site quick and synchronous determination of various molecules for applications in point-of-care, environmental monitoring, and airport security fields.

Details

Title
Large-Area and Patternable Nano-Dot Array from Electrolysis of ITO Film for Surface-Enhanced Raman Spectroscopy
Author
Lu, Han 1 ; Han Gengxin 1 ; Cao Jieping 1 ; Jin Mingliang 2 ; Ma Qilin 3 ; Akinoglu Eser Metin 4 ; Wang, Xin 2 ; Li, Nian 1 ; Zhou, Guofu 2 ; Shui Lingling 5   VIAFID ORCID Logo 

1  South China Normal University, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, Guangzhou, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) 
2  South China Normal University, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, Guangzhou, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397); South China Normal University, International Academy of Optoelectronics at Zhaoqing, Zhaoqing, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) 
3  South China Normal University, School of Information and Optoelectronic Science and Engineering, Guangzhou, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) 
4  South China Normal University, International Academy of Optoelectronics at Zhaoqing, Zhaoqing, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) 
5  South China Normal University, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, Guangzhou, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397); South China Normal University, International Academy of Optoelectronics at Zhaoqing, Zhaoqing, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397); South China Normal University, School of Information and Optoelectronic Science and Engineering, Guangzhou, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) 
Publication year
2020
Publication date
Dec 2020
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1186/s11671-019-3239-9
ProQuest document ID
2342415763
Copyright
Nanoscale Research Letters is a copyright of Springer, (2020). All Rights Reserved. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.