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Abstract
Innovations in soft material synthesis and fabrication technologies have led to the development of integrated soft electronic devices. Such soft devices offer opportunities to interact with biological cells, mimicking their soft environment. However, existing fabrication technologies cannot create the submicron-scale, soft transducers needed for healthcare and medical applications involving single cells. This work presents a nanofabrication strategy to create submicron-scale, all-soft electronic devices based on eutectic gallium-indium alloy (EGaIn) using a hybrid method utilizing electron-beam lithography and soft lithography. The hybrid lithography process is applied to a biphasic structure, comprising a metallic adhesion layer coated with EGaIn, to create soft nano/microstructures embedded in elastomeric materials. Submicron-scale EGaIn thin-film patterning with feature sizes as small as 180 nm and 1 μm line spacing was achieved, resulting in the highest resolution EGaIn patterning technique to date. The resulting soft and stretchable EGaIn patterns offer a currently unrivaled combination of resolution, electrical conductivity, and electronic/wiring density.
Though all-soft electronic devices with liquid metals are attractive due to the material’s compatibility with patterning methods, obtaining sub-micron patterns remains a challenge. Here, the authors report a hybrid lithography process to realize all-soft submicron-scale devices based on EGaIn.
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1 Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943); Georgia Institute of Technology, Institute for Electronics and Nanotechnology, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943); Stanford University, Department of Chemical Engineering, Stanford, USA (GRID:grid.168010.e) (ISNI:0000000419368956)
2 Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943); Georgia Institute of Technology, Institute for Electronics and Nanotechnology, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943)