Abstract

This paper presents a new gate driver integrated by In-Zn-O thin-film transistors (IZO TFTs) with the etch stop layer (ESL) structure, in which only a single negative power source is used on account of a new boosting module. The boosting module is controlled only by the VIN signal for generating a lower level than VSS. The proposed gate driver with 15 stages is fabricated through the IZO TFT process on a glass substrate to verify its function. The experiment results showed that the proposed gate driver can successfully output full-swing waveforms with resistive load RL=2 kΩ and capacitive load CL=30 pF at the 16.7 and 66.7 kHz clock frequencies, and can also output as small as 3.2 μs pulse width with little distortion, revealing good stability.

Details

Title
A metal oxide TFT gate driver with a single negative power source employing a boosting module
Author
Yan-Gang, Xu 1   VIAFID ORCID Logo  ; Jun-Wei, Chen 1 ; Wen-Xing, Xu 1 ; Zhou, Lei 2 ; Wei-Jing, Wu 1 ; Zou, Jian-Hua 2 ; Xu, Miao 1 ; Wang, Lei 1 ; Jun-Biao Peng 1 

1  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, People’s Republic of China 
2  Guangzhou New Vision Opto-Electronic Technology Co. Ltd., Guangzhou, People’s Republic of China 
End page
64
Publication year
2020
Publication date
Mar 2020
Publisher
Taylor & Francis Ltd.
ISSN
15980316
e-ISSN
21581606
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1080/15980316.2019.1689190
ProQuest document ID
2364952120
Copyright
© 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society. This work is licensed under the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.