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Abstract
By integrating a free-standing cadmium sulfide (CdS) nanowire onto a silicon nitride (SiN) photonic chip, we demonstrate a highly compact on-chip single-mode CdS nanowire laser. The mode selection is realized using a Mach-Zehnder interferometer (MZI) structure. When the pumping intensity exceeds the lasing threshold of 4.9 kW/cm2, on-chip single-mode lasing at ~518.9 nm is achieved with a linewidth of 0.1 nm and a side-mode suppression ratio of up to a factor of 20 (13 dB). The output of the nanowire laser is channelled into an on-chip SiN waveguide with high efficiency (up to 58%) by evanescent coupling, and the directional coupling ratio between the two output ports can be varied from 90 to 10% by predesigning the coupling length of the SiN waveguide. Our results open new opportunities for both nanowire photonic devices and on-chip light sources and may pave the way towards a new category of hybrid nanolasers for chip-integrated applications.
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Details

1 Zhejiang University, State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X)
2 Zhejiang University, State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Shanxi University, Collaborative Innovation Center of Extreme Optics, Taiyuan, China (GRID:grid.163032.5) (ISNI:0000 0004 1760 2008)