Abstract

Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 103 A cm−2. The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems.

Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.

Details

Title
Sub-nanosecond memristor based on ferroelectric tunnel junction
Author
Ma, Chao 1 ; Luo Zhen 1 ; Huang Weichuan 1 ; Zhao Letian 1 ; Chen, Qiaoling 1 ; Lin, Yue 1   VIAFID ORCID Logo  ; Liu, Xiang 1 ; Chen, Zhiwei 1 ; Liu Chuanchuan 1 ; Sun Haoyang 1 ; Jin, Xi 1 ; Yin Yuewei 1   VIAFID ORCID Logo  ; Li, Xiaoguang 2   VIAFID ORCID Logo 

1  University of Science and Technology of China, Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639) 
2  University of Science and Technology of China, Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639); Institute of Solid State Physics, CAS, Key Laboratory of Materials Physics, Hefei, China (GRID:grid.467847.e) (ISNI:0000 0004 1804 2954); Collaborative Innovation Center of Advanced Microstructures, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X) 
Publication year
2020
Publication date
2020
Publisher
Nature Publishing Group
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41467-020-15249-1
ProQuest document ID
2378839514
Copyright
This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.