Remarkably low flicker noise in solution-processed organic single crystal transistors

Abstract

Low-frequency noise generated by a fluctuation of current is a key issue for integrating electronic elements into a high-density circuit. Investigation of the noise in organic field-effect transistors is now sharing the spotlight with development of printed integrated circuits. The recent improvement of field-effect mobility (up to 15 cm² V⁻¹ s⁻¹) has allowed for organic integrated circuits with a relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding of the noise feature will be indispensable to further improve the circuit stability and durability. Here we performed noise measurements in solution-processed organic single crystal transistors, and discovered that a low trap density-of-states due to the absence of structural disorder in combination with coherent band-like transport gives rise to an unprecedentedly low flicker noise. The excellent noise property in organic single crystals will allow their potential to be fully exploited for high-speed communication and sensing applications.

Organic field-effect transistors are expected to become a key component of future integrated circuits. The authors seek to improve the performance of devices based on these materials by investigating the effect of flicker noise in a solution-processed organic single crystal transistor.