Abstract

The presence of a switchable spontaneous electric polarization makes ferroelectrics ideal candidates for the use in many applications such as memory and sensors devices. Since known ferroelectrics are rather limited, finding new ferroelectric materials has become a flourishing field. One promising route is to design the improper ferroelectrics. However, previous approach based on the Landau theory is not easily adopted for systems that are unrelated to the Pbnm perovskite structure. To this end, we develop a general design rule that is applicable to any system. By combining this rule with the density functional theory calculations, we identify previously unrecognized classes of ferroelectric materials. It is shown that the R3̄c perovskite structure can become ferroelectric by substituting half of the B-site cations. Compound ZnSrO2 with a non-perovskite layered structure can also be ferroelectric through the anion substitution. Moreover, our approach can be used to design new multiferroics as illustrated in the case of fluorine substituted LaMnO3.

Ferroelectricity: General approach for designing new ferroelectric materials

An innovative computational method could enable the design of new classes of ferroelectric materials. Ferroelectrics, whose spontaneous electric polarizations can be switched electrically, are useful for a range of applications, such as memory or sensing devices. However, relatively few naturally occurring materials are ferroelectric, and, while theoretical methods for designing new ferroelectrics are available, they are usually restricted to highly symmetric systems such as perovskite oxides. A team led by Hongjun Xiang from Fudan University have now developed a more general computational approach that can be applied to any system, and have used it to identify previously unrecognized classes of ferroelectrics. Such an approach could not only enable new ferroelectrics to be discovered, but it may also be suitable for designing multiferroic systems.

Details

Title
Designing new ferroelectrics with a general strategy
Author
Xu, Ke 1 ; Xue-Zeng, Lu 2 ; Xiang Hongjun 3 

 Fudan University, Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Shanghai, People’s Republic of China (GRID:grid.8547.e) (ISNI:0000000101252443); Hubei University of Arts and Science, Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Xiangyang, People’s Republic of China (GRID:grid.412979.0) (ISNI:000000041759225X); Collaborative Innovation Center of Advanced Microstructures, Nanjing, People’s Republic of China (GRID:grid.41156.37) (ISNI:000000012314964X) 
 Northwestern University, Department of Materials Science and Engineering, Evanston, USA (GRID:grid.16753.36) (ISNI:0000000122993507) 
 Fudan University, Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Shanghai, People’s Republic of China (GRID:grid.8547.e) (ISNI:0000000101252443); Collaborative Innovation Center of Advanced Microstructures, Nanjing, People’s Republic of China (GRID:grid.41156.37) (ISNI:000000012314964X) 
Publication year
2017
Publication date
2017
Publisher
Nature Publishing Group
e-ISSN
23974648
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2389702266
Copyright
© The Author(s) 2017. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.