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Abstract
Contact-electrification is a universal effect for all existing materials, but it still lacks a quantitative materials database to systematically understand its scientific mechanisms. Using an established measurement method, this study quantifies the triboelectric charge densities of nearly 30 inorganic nonmetallic materials. From the matrix of their triboelectric charge densities and band structures, it is found that the triboelectric output is strongly related to the work functions of the materials. Our study verifies that contact-electrification is an electronic quantum transition effect under ambient conditions. The basic driving force for contact-electrification is that electrons seek to fill the lowest available states once two materials are forced to reach atomically close distance so that electron transitions are possible through strongly overlapping electron wave functions. We hope that the quantified series could serve as a textbook standard and a fundamental database for scientific research, practical manufacturing, and engineering.
The mechanism of contact electrification remains a topic of debate. Here, the authors present a quantitative database of the triboelectric charge density and band structure of many inorganic materials, verifying that contact electrification between solids is an electron quantum transition effect.
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1 Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943)
2 Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943); China University of Mining and Technology, School of Materials Science and Engineering, Xuzhou, People’s Republic of China (GRID:grid.411510.0) (ISNI:0000 0000 9030 231X)
3 Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943); Xiamen University, College of Materials, Xiamen, People’s Republic of China (GRID:grid.12955.3a) (ISNI:0000 0001 2264 7233)
4 Xiamen University, College of Materials, Xiamen, People’s Republic of China (GRID:grid.12955.3a) (ISNI:0000 0001 2264 7233)
5 Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, USA (GRID:grid.213917.f) (ISNI:0000 0001 2097 4943); Chinese Academy of Sciences, Beijing Institute of Nanoenergy and Nanosystems, Beijing, People’s Republic of China (GRID:grid.9227.e) (ISNI:0000000119573309)