Precise control of the interlayer twist angle in large scale MoS2 homostructures

Abstract

Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS₂ homostructures via the combination of wafer-scale highly-oriented monolayer MoS₂ growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS₂ homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS₂ homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.

Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS₂ homostructures that enables continuous change in their indirect bandgap, Moiré phonons and electrical properties.