Abstract

An unexploited property of graphene-based heterojunctions is the tunable doping of the junction via electrostatic gating. This unique property may be key in advancing electronic transport across interfaces with semiconductors. Here, we engineer transport in semiconducting TMDs by constructing a lateral heterostructure with epitaxial graphene and tuning its intrinsic doping to form a p–n junction between the graphene and the semiconducting TMDs. Graphene grown on SiC (epitaxial graphene) is intrinsically doped via substrate polarization without the introduction of an external dopant, thus enabling a platform for pristine heterostructures with a target band alignment. We demonstrate an electrostatically tunable graphene/MoS2p–n junction with >20× reduction and >10× increased tunability in contact resistance (Rc) compared with metal/TMD junctions, attributed to band alignment engineering and the tunable density of states in graphene. This unique concept provides improved control over transport across 2D p–n junctions.

Details

Title
Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures
Author
Subramanian Shruti 1 ; Xu, Ke 2 ; Wang Yuanxi 3 ; Moser, Simon 4   VIAFID ORCID Logo  ; Simonson, Nicholas A 1 ; Deng, Donna 1 ; Crespi, Vincent H 3   VIAFID ORCID Logo  ; Fullerton-Shirey, Susan K 5 ; Robinson, Joshua A 6   VIAFID ORCID Logo 

1  The Pennsylvania State University, University Park, Department of Materials Science and Engineering, State College, USA (GRID:grid.29857.31) (ISNI:0000 0001 2097 4281); The Pennsylvania State University, University Park, Center for 2-Dimensional and Layered Materials, State College, USA (GRID:grid.29857.31) (ISNI:0000 0001 2097 4281) 
2  University of Pittsburgh, Department of Chemical and Petroleum Engineering, Pittsburgh, USA (GRID:grid.21925.3d) (ISNI:0000 0004 1936 9000) 
3  The Pennsylvania State University, University Park, Department of Physics, State College, USA (GRID:grid.29857.31) (ISNI:0000 0001 2097 4281) 
4  E. O. Lawrence Berkeley National Laboratory, Advanced Light Source, Berkeley, USA (GRID:grid.184769.5) (ISNI:0000 0001 2231 4551); Universität Würzburg, Experimentelle Physik IV and Würzburg-Dresden Cluster of Excellence ct.qmat, Würzburg, Germany (GRID:grid.8379.5) (ISNI:0000 0001 1958 8658) 
5  University of Pittsburgh, Department of Chemical and Petroleum Engineering, Pittsburgh, USA (GRID:grid.21925.3d) (ISNI:0000 0004 1936 9000); University of Pittsburgh, Department of Electrical and Computer Engineering, Pittsburgh, USA (GRID:grid.21925.3d) (ISNI:0000 0004 1936 9000) 
6  The Pennsylvania State University, University Park, Department of Materials Science and Engineering, State College, USA (GRID:grid.29857.31) (ISNI:0000 0001 2097 4281); The Pennsylvania State University, University Park, Center for 2-Dimensional and Layered Materials, State College, USA (GRID:grid.29857.31) (ISNI:0000 0001 2097 4281); The Pennsylvania State University, University Park, 2-Dimensional Crystal Consortium, State College, USA (GRID:grid.29857.31) (ISNI:0000 0001 2097 4281); The Pennsylvania State University, University Park, Center for Atomically Thin Multifunctional Coatings, State College, USA (GRID:grid.29857.31) (ISNI:0000 0001 2097 4281) 
Publication year
2020
Publication date
2020
Publisher
Nature Publishing Group
e-ISSN
23977132
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41699-020-0144-0
ProQuest document ID
2401746253
Copyright
© The Author(s) 2020. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.