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Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of the different orientations that the atoms can have within a single layer, or due to the ways that different layers can stack. Here we report a unique study involving direct visualization of structural transformations in atomically thin layers under highly non-equilibrium thermodynamic conditions. We probe these transformations at the atomic scale using real-time, aberration-corrected scanning transmission electron microscopy and observe strong dependence of the resulting structures and phases on both heating rate and temperature. A fast heating rate (25 °C/sec) yields highly ordered crystalline hexagonal islands of sizes of less than 20 nm which are composed of a mixture of 2H and 3R phases. However, a slow heating rate (25 °C/min) yields nanocrystalline and sub-stoichiometric amorphous regions. These differences are explained by different rates of sulfur evaporation and redeposition. The use of non-equilibrium heating rates to achieve highly crystalline and quantum-confined features from 2D atomic layers present a new route to synthesize atomically thin, laterally confined nanostructures and opens new avenues for investigating fundamental electronic phenomena in confined dimensions.
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1 University of Pennsylvania, Department of Electrical and Systems Engineering, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972); University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972)
2 University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972)
3 University of Pennsylvania, Vagelos Integrated Program for Energy Research, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972)
4 University of Pennsylvania, Department of Electrical and Systems Engineering, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972)