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Abstract
There has been enormous recent interest in heterostructures of two-dimensional van der Waals materials. Integrating materials with different quantum ground states in vertical heterostructures is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe2) with the monolayer vanadium diselenide (VSe2). Molecular-beam epitaxy growth in ultra-high vacuum yields clean and atomically sharp interfaces. Combining different characterization techniques and density-functional theory calculations, we investigate the electronic and magnetic properties of VSe2 on NbSe2. Low temperature scanning tunneling microscopy measurements show an absence of the typical charge density wave on VSe2 and demonstrate a reduction of the superconducting gap of NbSe2 on the VSe2 layer. This suggests magnetization of the VSe2 sheet, at least on the local scale. Our work demonstrates superconducting-magnetic hybrid materials with potential applications in future electronics devices.
Whether two dimensional magnetic ordering exists in monolayers of VSe2 has been the subject of recent debate. Here, the authors investigate monolayers of VSe2 grown on an NbSe2 substrate and demonstrate a reduction in the superconducting gap of the NbSe2 and absence of charge density wave formation supporting the presence of a magnetic ground state in the VSe2.
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1 Aalto University, Department of Applied Physics, Aalto, Finland (GRID:grid.5373.2) (ISNI:0000000108389418)
2 Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, Spain (GRID:grid.452382.a) (ISNI:0000 0004 1768 3100); Centro de Física de Materiales (CSIC-UPV-EHU), Manuel Lardizábal 4, San Sebastián, Spain (GRID:grid.482265.f) (ISNI:0000 0004 1762 5146)
3 Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, Spain (GRID:grid.452382.a) (ISNI:0000 0004 1768 3100); Centro de Física de Materiales (CSIC-UPV-EHU), Manuel Lardizábal 4, San Sebastián, Spain (GRID:grid.482265.f) (ISNI:0000 0004 1762 5146); Ikerbasque, Basque Foundation for Science, Bilbao, Spain (GRID:grid.424810.b) (ISNI:0000 0004 0467 2314)
4 Aalto University, Department of Applied Physics, Aalto, Finland (GRID:grid.5373.2) (ISNI:0000000108389418); University of Oulu, Microelectronics Research Unit, Oulu, Finland (GRID:grid.10858.34) (ISNI:0000 0001 0941 4873)