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Abstract
Structural phase transitions serve as the basis for many functional applications including shape memory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc. In such materials, lattice incompatibility between transformed and parent phases often results in a thermal hysteresis, which is intimately tied to degradation of reversibility of the transformation. The non-linear theory of martensite suggests that the hysteresis of a martensitic phase transformation is solely determined by the lattice constants, and the conditions proposed for geometrical compatibility have been successfully applied to minimizing the hysteresis in SMAs. Here, we apply the non-linear theory to a correlated oxide system (V1−xWxO2), and show that the hysteresis of the MIT in the system can be directly tuned by adjusting the lattice constants of the phases. The results underscore the profound influence structural compatibility has on intrinsic electronic properties, and indicate that the theory provides a universal guidance for optimizing phase transforming materials.
The effect of the lattice degrees of freedom on the metal-insulator transition of VO2 remains a topic of debate. Here the authors show that the lattice compatibility of the high temperature tetragonal phase and the low-temperature monoclinic phase strongly influences the electronic transition, as manifested in the tunability of its hysteresis via chemical substitution.
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1 University of Maryland, Department of Materials Science and Engineering, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177)
2 University of Maryland, Department of Materials Science and Engineering, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177); Pukyong National University, Department of Physics, Busan, South Korea (GRID:grid.412576.3) (ISNI:0000 0001 0719 8994)
3 Theiss Research, Inc, La Jolla, USA (GRID:grid.421663.4); National Institute of Standards and Technology, Material Science and Engineering Division, Materials Measurement Laboratory, Gaithersburg, USA (GRID:grid.94225.38) (ISNI:000000012158463X)
4 University of Maryland, Chemical and Biomolecular Engineering, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177)
5 University of Maryland, Department of Chemistry and Biochemistry, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177)
6 Hong Kong University of Science and Technology, Department of Mechanical and Aerospace Engineering, Clear Water Bay, Hong Kong (GRID:grid.24515.37) (ISNI:0000 0004 1937 1450)
7 University of Minnesota, Department of Aerospace Engineering and Mechanics, Minneapolis, USA (GRID:grid.17635.36) (ISNI:0000000419368657)
8 National Institute of Standards and Technology, Material Science and Engineering Division, Materials Measurement Laboratory, Gaithersburg, USA (GRID:grid.94225.38) (ISNI:000000012158463X)
9 University of Maryland, Department of Materials Science and Engineering, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177); University of Maryland, Maryland Quantum Materials Center, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177)