It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin–orbital torque effect. However, this scheme is energy consuming and may produce massive Joule heating. To reduce energy dissipation and risk of heightened temperatures of skyrmion-based devices, an effective solution is to use electric field instead of current as stimulus. Here, we realize an electric-field manipulation of skyrmions in a nanostructured ferromagnetic/ferroelectrical heterostructure at room temperature via an inverse magneto-mechanical effect. Intriguingly, such a manipulation is non-volatile and exhibits a multistate feature. Numerical simulations indicate that the electric-field manipulation of skyrmions originates from strain-mediated modification of effective magnetic anisotropy and Dzyaloshinskii–Moriya interaction. Our results open a direction for constructing low-energy-dissipation, non-volatile, and multistate skyrmion-based spintronic devices.
Spin-polarized current manipulation of magnetic skyrmions is energy consuming. Here, the authors achieve an electric-field manipulation of individual skyrmions in a nanostructured ferromagnetic/ferroelectrical heterostructure at room temperature via an inverse magneto-mechanical effect.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details






1 Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397); National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397)
2 University of Science and Technology Beijing, School of Materials Science and Engineering, Beijing, China (GRID:grid.69775.3a) (ISNI:0000 0004 0369 0705)
3 The Chinese University of Hong Kong, Shenzhen, School of Science and Engineering, Guangdong, China (GRID:grid.10784.3a) (ISNI:0000 0004 1937 0482)
4 Tianjin University, Colleage of Science, Tianjin, China (GRID:grid.33763.32) (ISNI:0000 0004 1761 2484)
5 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China (GRID:grid.458438.6) (ISNI:0000 0004 0605 6806)
6 Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia (GRID:grid.45672.32) (ISNI:0000 0001 1926 5090)
7 Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X)