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Abstract
Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronic devices. However, the direct growth of their crystals is in its infancy. Here we report a chemical vapor deposition approach to controllably grow layered tetragonal and non-layered hexagonal FeTe nanoplates with their thicknesses down to 3.6 and 2.8 nm, respectively. Moreover, transport measurements reveal these obtained FeTe nanoflakes show a thickness-dependent magnetic transition. Antiferromagnetic tetragonal FeTe with the Néel temperature (TN) gradually decreases from 70 to 45 K as the thickness declines from 32 to 5 nm. And ferromagnetic hexagonal FeTe is accompanied by a drop of the Curie temperature (TC) from 220 K (30 nm) to 170 K (4 nm). Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from its concomitant lattice distortion and Stoner instability. This study highlights its potential applications in future spintronic devices.
Two-dimensional magnets with intrinsic ferromagnetic/antiferromagnetic ordering are highly desirable for future spintronic devices. Here, the authors demonstrate a chemical vapor deposition approach to controllably grow ultrathin FeTe crystals with antiferromagnetic tetragonal and ferromagnetic hexagonal phase, showing a thickness-dependent magnetic transition.
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1 Nanyang Technological University, School of Materials Science and Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361); Research Techno Plaza, CINTRA CNRS/NTU/THALES, UMI 3288, Singapore, Singapore (GRID:grid.59025.3b)
2 Nanyang Technological University, School of Physical and Mathematical Sciences, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361)
3 National University of Singapore, Department of Materials Science and Engineering, Singapore, Singapore (GRID:grid.4280.e) (ISNI:0000 0001 2180 6431)
4 Renmin University of China, Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Beijing, China (GRID:grid.24539.39) (ISNI:0000 0004 0368 8103)
5 National University of Singapore, Department of Physics, Singapore, Singapore (GRID:grid.4280.e) (ISNI:0000 0001 2180 6431)
6 Nanjing University, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X)
7 University of Macau, Institute of Applied Physics and Materials Engineering, Macau, China (GRID:grid.41156.37); University of Macau, Department of Physics and Chemistry, Faculty of Science and Technology, Macau, China (GRID:grid.41156.37)
8 Research Techno Plaza, CINTRA CNRS/NTU/THALES, UMI 3288, Singapore, Singapore (GRID:grid.41156.37)
9 Nanyang Technological University, School of Materials Science and Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361)
10 Research Techno Plaza, CINTRA CNRS/NTU/THALES, UMI 3288, Singapore, Singapore (GRID:grid.4280.e)
11 Nanyang Technological University, School of Physical and Mathematical Sciences, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361); Nanyang Technological University, Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361)
12 Nanyang Technological University, School of Materials Science and Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361); Research Techno Plaza, CINTRA CNRS/NTU/THALES, UMI 3288, Singapore, Singapore (GRID:grid.59025.3b); Nanyang Technological University, Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361)