Abstract

Layered kagome-lattice 3d transition metals are emerging as an exciting platform to explore the frustrated lattice geometry and quantum topology. However, the typical kagome electronic bands, characterized by sets of the Dirac-like band capped by a phase-destructive flat band, have not been clearly observed, and their orbital physics are even less well investigated. Here, we present close-to-textbook kagome bands with orbital differentiation physics in CoSn, which can be well described by a minimal tight-binding model with single-orbital hopping in Co kagome lattice. The capping flat bands with bandwidth less than 0.2 eV run through the whole Brillouin zone, especially the bandwidth of the flat band of out-of-plane orbitals is less than 0.02 eV along Γ−M. The energy gap induced by spin-orbit interaction at the Dirac cone of out-of-plane orbitals is much smaller than that of in-plane orbitals, suggesting orbital-selective character of the Dirac fermions.

The understanding of kagome bands, which are characterized by Dirac-like bands capped by a flat band, remains largely elusive. Here, Liu et al. report the observation of a flat band and Dirac bands as ideal features of kagome bands in CoSn, revealing orbital-selective character.

Details

Title
Orbital-selective Dirac fermions and extremely flat bands in frustrated kagome-lattice metal CoSn
Author
Liu, Zhonghao 1   VIAFID ORCID Logo  ; Li, Man 2 ; Wang, Qi 3 ; Wang, Guangwei 4 ; Wen Chenhaoping 5   VIAFID ORCID Logo  ; Jiang, Kun 6 ; Lu Xiangle 1 ; Yan Shichao 5 ; Huang Yaobo 7 ; Shen Dawei 1   VIAFID ORCID Logo  ; Jia-Xin, Yin 8   VIAFID ORCID Logo  ; Wang, Ziqiang 6 ; Yin Zhiping 4   VIAFID ORCID Logo  ; Hechang, Lei 3   VIAFID ORCID Logo  ; Wang, Shancai 3   VIAFID ORCID Logo 

 Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics, Shanghai Institute of Microsystem and Information Technology, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, College of Materials Science and Opto-Electronic Technology, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419) 
 Renmin University of China, Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials&Micro-Nano Devices, Beijing, China (GRID:grid.24539.39) (ISNI:0000 0004 0368 8103); Chinese Academy of Sciences, Shanghai Advanced Research Institute, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309) 
 Renmin University of China, Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials&Micro-Nano Devices, Beijing, China (GRID:grid.24539.39) (ISNI:0000 0004 0368 8103) 
 Beijing Normal University, Department of Physics and Center for Advanced Quantum Studies, Beijing, China (GRID:grid.20513.35) (ISNI:0000 0004 1789 9964) 
 ShanghaiTech University, School of Physical Science and Technology, Shanghai, China (GRID:grid.440637.2) (ISNI:0000 0004 4657 8879) 
 Boston College, Department of Physics, Chestnut Hill, USA (GRID:grid.208226.c) (ISNI:0000 0004 0444 7053) 
 Chinese Academy of Sciences, Shanghai Advanced Research Institute, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309) 
 Princeton University, Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton, USA (GRID:grid.16750.35) (ISNI:0000 0001 2097 5006) 
Publication year
2020
Publication date
2020
Publisher
Nature Publishing Group
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2432264253
Copyright
© The Author(s) 2020. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.