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Abstract
In many ferroelectrics, large electromechanical strains are observed near regions of composition- or temperature- driven phase coexistence. Phenomenologically, this is attributed to easy re-orientation of the polarization vector and/or phase transition, although their effects are highly convoluted and difficult to distinguish experimentally. Here, we used synchrotron X-ray scattering and digital image correlation to differentiate between the microscopic mechanisms leading to large electrostrains in an exemplary Pb-free piezoceramic Sn-doped barium calcium zirconate titanate. Large electrostrains of ~0.2% measured at room-temperature are attributed to an unconventional effect, wherein polarization switching is aided by a reversible phase transition near the tetragonal-orthorhombic phase boundary. Additionally, electrostrains of ~0.1% or more could be maintained from room temperature to 140 °C due to a succession of different microscopic mechanisms. In situ X-ray diffraction elucidates that while 90° domain reorientation is pertinent below the Curie temperature (TC), isotropic distortion of polar clusters is the dominant mechanism above TC.
Piezoelectric materials are used for a broad range of industrial and research applications. The authors use synchrotron X-ray scattering and digital imaging correlation to investigate the microscopic mechanisms behind electromechanical strains in a lead-free piezoceramic material, which suggests an unconventional domain switching mechanism and ability to enhance the temperature range of operation by suitable doping strategies.
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1 City University of Hong Kong, Department of Materials Science and Engineering, Hong Kong SAR, China (GRID:grid.35030.35) (ISNI:0000 0004 1792 6846)
2 Technical University of Darmstadt, Department of Materials and Earth Sciences, Darmstadt, Germany (GRID:grid.6546.1) (ISNI:0000 0001 0940 1669)
3 Université Paris-Saclay, CentraleSupélec, CNRS, Laboratorie de Génie Electrique et Electronique de Paris, Gif-sur-Yvette, France (GRID:grid.494567.d) (ISNI:0000 0004 4907 1766); Sorbonne Université, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, Paris, France (GRID:grid.494567.d)
4 Aarhus University, Center for Materials Crystallography, Department of Chemistry and iNANO, Aarhus C, Denmark (GRID:grid.7048.b) (ISNI:0000 0001 1956 2722)
5 SNBL, ESRF, Grenoble, France (GRID:grid.5398.7) (ISNI:0000 0004 0641 6373); Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia (GRID:grid.32495.39) (ISNI:0000 0000 9795 6893)
6 Advanced Photon Source, Argonne National Laboratory, Argonne, USA (GRID:grid.187073.a) (ISNI:0000 0001 1939 4845)
7 Aarhus University, Center for Materials Crystallography, Department of Chemistry and iNANO, Aarhus C, Denmark (GRID:grid.7048.b) (ISNI:0000 0001 1956 2722); Lund University, MAX IV Laboratory, Lund, Sweden (GRID:grid.4514.4) (ISNI:0000 0001 0930 2361)