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Abstract
The absence of mirror symmetry, or chirality, is behind striking natural phenomena found in systems as diverse as DNA and crystalline solids. A remarkable example occurs when chiral semimetals with topologically protected band degeneracies are illuminated with circularly polarized light. Under the right conditions, the part of the generated photocurrent that switches sign upon reversal of the light’s polarization, known as the circular photo-galvanic effect, is predicted to depend only on fundamental constants. The conditions to observe quantization are non-universal, and depend on material parameters and the incident frequency. In this work, we perform terahertz emission spectroscopy with tunable photon energy from 0.2 –1.1 eV in the chiral topological semimetal CoSi. We identify a large longitudinal photocurrent peaked at 0.4 eV reaching ~550 μ A/V2, which is much larger than the photocurrent in any chiral crystal reported in the literature. Using first-principles calculations we establish that the peak originates only from topological band crossings, reaching 3.3 ± 0.3 in units of the quantization constant. Our calculations indicate that the quantized circular photo-galvanic effect is within reach in CoSi upon doping and increase of the hot-carrier lifetime. The large photo-conductivity suggests that topological semimetals could potentially be used as novel mid-infrared detectors.
Quantized circular photogalvanic effect (CPGE) is predicted in chiral topological semimetals, but the experimental observation remains challenging. Here, Ni et al. observe a large topological longitudinal photocurrent in CoSi, which is much larger than the photocurrent in any other chiral crystals, indicating quantized CPGE within reach upon doping and increase of the hot-carrier lifetime.
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1 University of Pennsylvania, Department of Physics and Astronomy, Philadelphia, USA (GRID:grid.25879.31) (ISNI:0000 0004 1936 8972)
2 University of Maryland, Maryland Quantum Materials Center, Department of Physics, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177)
3 Massachusetts Institute of Technology, Department of Physics, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Max-Planck-Institut fur Chemische Physik fester Stoffe, Dresden, Germany (GRID:grid.419507.e) (ISNI:0000 0004 0491 351X)
4 Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Spain (GRID:grid.452504.2) (ISNI:0000 0004 0625 9726)
5 University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Fribourg, Switzerland (GRID:grid.8534.a) (ISNI:0000 0004 0478 1713)
6 Max-Planck-Institut fur Chemische Physik fester Stoffe, Dresden, Germany (GRID:grid.419507.e) (ISNI:0000 0004 0491 351X); Indian Institute of Technology, Department of Physics, Hauz Khas, India (GRID:grid.417967.a) (ISNI:0000 0004 0558 8755)
7 University of Maryland, Maryland Quantum Materials Center, Department of Physics, College Park, USA (GRID:grid.164295.d) (ISNI:0000 0001 0941 7177); Canadian Institute for Advanced Research, Toronto, Canada (GRID:grid.440050.5) (ISNI:0000 0004 0408 2525)
8 Max-Planck-Institut fur Chemische Physik fester Stoffe, Dresden, Germany (GRID:grid.419507.e) (ISNI:0000 0004 0491 351X); Canadian Institute for Advanced Research, Toronto, Canada (GRID:grid.440050.5) (ISNI:0000 0004 0408 2525)
9 University of Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France (GRID:grid.440050.5)
10 Donostia International Physics Center, Donostia-San, Spain (GRID:grid.11480.3c) (ISNI:0000000121671098); IKERBASQUE, Basque Foundation for Science, Bilbao, Spain (GRID:grid.424810.b) (ISNI:0000 0004 0467 2314)