Abstract

An possible reason why the activated carbon used in the exhaust facility of real semiconductor production factory could not be regenerated by scCO2 regeneration was estimated to be attributable to its high boiling point adsorbates which showed a peak in TGA (Thermogravimetric analysis) curve at 400-900°C. This study was conducted to experimentally verify the above insight by using TGA analysis and scCO2 regeneration for the real samples with different loads from the factory. The experimental results showed that high boiling point ratio defined by TGA analysis was less than 4.0% in case of the heating treatment temperature of 200 °C in the exhasut facility of real semiconductor production factory. This result suggested regeneration rate of the activated carbon was higher than 80%. Our scCO2 regeneration process can achieve high efficiency as a practical application.

Details

Title
Practical Reuse of Activated Carbon in the Exhaust Facility of Semiconductor Production Factory with Supercritical Carbon Dioxide Regeneration
Author
Ito, Yasuyuki; Ushiki, Ikuo; Sato, Yoshiyuki; Inomata, Hiroshi
Section
Supercritical Fluid Technology
Publication year
2021
Publication date
2021
Publisher
EDP Sciences
ISSN
22747214
e-ISSN
2261236X
Source type
Conference Paper
Language of publication
English
ProQuest document ID
2487453091
Copyright
© 2021. This work is licensed under https://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and conditions, you may use this content in accordance with the terms of the License.