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Abstract
Antiferromagnets exhibiting distinctive responses to the electric and magnetic fields have attracted attention as breakthrough materials in spintronics. The current-induced Néel-order spin-orbit torque can manipulate the antiferromagnetic domain wall (AFDW) in a collinear CuMnAs owing to a lack of local inversion symmetry. Here, we demonstrate that the electrical nucleation, displacement, and detection of AFDWs are also possible in a noncollinear antiferromagnet, i.e., chiral Mn3Sn with local inversion symmetry. The asymmetric magnetoresistance measurements reveal that AFDWs align parallel to the kagome planes in the microfabricated wire. Numerical calculation shows these AFDWs consist of stepwise sub-micron size Bloch wall-like spin textures in which the octupole moment gradually rotates over three segments of domain walls. We further observed that the application of a pulse-current drives these octupole based AFDWs along the wire. Our findings could provide a guiding principle for engineering the AFDW structure in the chiral antiferromagnetic materials.
Antiferromagnetic systems for application in spintronics are less developed that their ferromagnetic counterparts but offer the prospect of increased stability and speed in their magnetisation dynamics. Here, the authors investigate the electrical detection and displacement of antiferromagnetic domain walls in Mn3Sn single crystals.
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1 University of Tokyo, Institute for Solid State Physics, Kashiwa, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); Center for Emergent Matter Science, RIKEN, Wako, Japan (GRID:grid.7597.c) (ISNI:0000000094465255); Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880)
2 University of Electro-Communications, Department of Computer Science, Tokyo, Japan (GRID:grid.266298.1) (ISNI:0000 0000 9271 9936)
3 Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943); Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943)
4 University of Tokyo, Institute for Solid State Physics, Kashiwa, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)
5 Center for Emergent Matter Science, RIKEN, Wako, Japan (GRID:grid.7597.c) (ISNI:0000000094465255)
6 Tohoku University, Institute for Materials Research, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943)
7 University of Tokyo, Institute for Solid State Physics, Kashiwa, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); CREST, Japan Science and Technology Agency (JST), Saitama, Japan (GRID:grid.419082.6) (ISNI:0000 0004 1754 9200); University of Tokyo, Hongo, Department of Physics, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); University of Tokyo, Hongo, Trans-scale Quantum Science Institute, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)
8 University of Tokyo, Institute for Solid State Physics, Kashiwa, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); Center for Emergent Matter Science, RIKEN, Wako, Japan (GRID:grid.7597.c) (ISNI:0000000094465255); CREST, Japan Science and Technology Agency (JST), Saitama, Japan (GRID:grid.419082.6) (ISNI:0000 0004 1754 9200); University of Tokyo, Hongo, Trans-scale Quantum Science Institute, Tokyo, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)