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Abstract
Electrical manipulation of magnetization could be an essential function for energy-efficient spintronics technology. A magnetic topological insulator, possessing a magnetically gapped surface state with spin-polarized electrons, not only exhibits exotic topological phases relevant to the quantum anomalous Hall state but also enables the electrical control of its magnetic state at the surface. Here, we demonstrate efficient current-induced switching of the surface ferromagnetism in hetero-bilayers consisting of the topological insulator (Bi1-xSbx)2Te3 and the ferromagnetic insulator Cr2Ge2Te6, where the proximity-induced ferromagnetic surface states play two roles: efficient charge-to-spin current conversion and emergence of large anomalous Hall effect. The sign reversal of the surface ferromagnetic states with current injection is clearly observed, accompanying the nearly full magnetization reversal in the adjacent insulating Cr2Ge2Te6 layer of an optimal thickness range. The present results may facilitate an electrical control of dissipationless topological-current circuits.
Electrical manipulation of magnetization in devices made of topological materials may be an essential route towards future spintronics technology. Here, Mogi et al. show efficient current-induced switching of surface ferromagnetism in hetero-bilayers of topological insulator (Bi1-xSbx)2Te3 and ferromagnetic insulator Cr2Ge2Te6.
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1 University of Tokyo, Department of Applied Physics and Quantum Phase Electronics Center (QPEC), Bunkyo-ku, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0); Department of Physics, Massachusetts Institute of Technology, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
2 University of Tokyo, Department of Applied Physics and Quantum Phase Electronics Center (QPEC), Bunkyo-ku, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); Department of Physics, Massachusetts Institute of Technology, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
3 University of Tokyo, Department of Applied Physics and Quantum Phase Electronics Center (QPEC), Bunkyo-ku, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)
4 RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0)
5 University of Tokyo, Department of Applied Physics and Quantum Phase Electronics Center (QPEC), Bunkyo-ku, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0)
6 Tohoku University, Institute for Materials Research, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943)
7 University of Tokyo, Department of Applied Physics and Quantum Phase Electronics Center (QPEC), Bunkyo-ku, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X); RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan (GRID:grid.474689.0); Tokyo College, University of Tokyo, Bunkyo-ku, Japan (GRID:grid.26999.3d) (ISNI:0000 0001 2151 536X)