Abstract

Various studies on multi-valued-logic (MVL) computing, which utilizes more than two logic states, have recently been resumed owing to the demand for greater power saving in the current logic technologies. In particular, unlike old-fashioned researches, extensive efforts have been focused on implementing single devices with multiple threshold voltages via a negative-differential current change phenomenon. In this work, we report a multiple negative-differential-transconductance (NDT) phenomenon, which is achieved through the control of partial gate potential and light power/wavelength in a van-der-Waals (vdW) multi-channel phototransistor. The partial gating formed a controllable potential barrier/well in the vdW channel, enabling control over the collection of carriers and eventually inducing the NDT phenomenon. Especially, the strategy shining lights with different powers/wavelengths facilitated the precise NDT control and the realization of the multiple NDT phenomenon. Finally, the usability of this multiple NDT device as a core device of MVL arithmetic circuits such as MVL inverters/NAND/NOR gates is demonstrated.

Details

Title
Controllable potential barrier for multiple negative-differential-transconductance and its application to multi-valued logic computing
Author
Seo Seunghwan 1 ; Koo Jiwan 1 ; Jae-Woong, Choi 2 ; Heo Keun 1 ; Andreev Maksim 1 ; Je-Jun, Lee 1 ; Ju-Hee, Lee 1 ; Cho Jeong-Ick 1 ; Kim Hyeongjun 1 ; Yoo Gwangwe 1 ; Dong-Ho, Kang 3 ; Shim Jaewoo 1 ; Jin-Hong, Park 4   VIAFID ORCID Logo 

 Sungkyunkwan University, Department of Electrical and Computer Engineering, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X) 
 Sungkyunkwan University, SKKU Advanced Institute of Nanotechnology, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X) 
 Nanyang Technological University (NTU), School of Electrical and Electronic Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361) 
 Sungkyunkwan University, Department of Electrical and Computer Engineering, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X); Sungkyunkwan University, SKKU Advanced Institute of Nanotechnology, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X) 
Publication year
2021
Publication date
2021
Publisher
Nature Publishing Group
e-ISSN
23977132
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2503046994
Copyright
© The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.