Abstract

Phase change memory (PCM) has been regarded as one of the most promising candidates for the next-generation nonvolatile memory. In this paper, we propose PtSb2Te (PST) phase change material for phase change memory. The doping of Pt improves the crystallization temperature and Ten-year data-retention temperature of Sb2Te to 180 °C, 192 °C, 204 °C and 117 °C,123 °C,137 °C, and refines the grain to about 10 nm. At the same time, the density change of Sb2Te film after phase transition is reduced to 4.19% due to the addition of Pt. There are no other new phases formed in PST film except hexagonal Sb2Te phase. For PST-based phase change memory cell, only 10 ns electrical pulse is required to complete the reversible operation with a Reset voltage lower than 4.3 V. At the same time, the number of cycle operations of the memory cell exceeds 105 and it has a lower resistance drift coefficient as 0.019.

Details

Title
Pt-Sb2Te as high speed phase-change materials with excellent thermal stability
Author
Song, Zhihao 1   VIAFID ORCID Logo  ; Guo, Junmei 1 ; Chen, Jialin 1 ; Wen, Ming 1 ; Tan, ZhiLong 1   VIAFID ORCID Logo  ; Wang, Chuanjun 1 ; Guan, Weiming 1 ; Zhang, Kunhua 1 

1  State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, People’s Republic of China 
Publication year
2021
Publication date
Mar 2021
Publisher
IOP Publishing
e-ISSN
20531591
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1088/2053-1591/abed8b
ProQuest document ID
2512913804
Copyright
© 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.