It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
The results of a study of multilayer photodiodes based on InAs1- x Sb x solid solutions (0.3 < x <0.4), with a long-wavelength cut-off of λ 0.1 ≈ 11 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were analyzed in the temperature range of 80 ÷ 300 K. Experimental samples of photodetectors are characterized by a quantum efficiency of 0.23 at 150 K and a diffusion mechanism of current flow at least in the 200-300 K range. The detectivity of the immersion lens PD at the maximum has values of at least D*8 µm = 8·108 and D* 5.5 µm = 1010 cm·Hz1/2W-1 at 300 and 150 K, respectively.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Ioffe Institute RAS, St. Petersburg 194021, Russia
2 Ioffe Institute RAS, St. Petersburg 194021, Russia; IoffeLED Ltd., St. Petersburg 194064, Russia