Abstract

Highlights

  • A self-powered α-In2Se3/3R MoS2 heterojunction is successfully developed and shows strong photo response to the visible and near infrared light.

  • The heterojunction photodetector delivers an ultrahigh photoresponsivity of 2.9 × 103 A W−1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of − 0.26%.

  • This work demonstrates that the transport of photo generated carriers is clearly modulated by mechanical stimuli through the piezo-phototronic effect at the heterojunction interface.

Semiconducting piezoelectric α-In2Se3 and 3R MoS2 have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In2Se3 and 3R MoS2 flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In2Se3/3R MoS2 vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 103 A W−1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of − 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In2Se3/3R MoS2 photoelectric response through an appropriate mechanical stimulus.

Details

Title
Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction
Author
Cai Weifan 1 ; Wang, Jingyuan 1 ; He, Yongmin 2 ; Liu, Sheng 3 ; Xiong Qihua 3 ; Liu, Zheng 2 ; Zhang, Qing 1 

 Nanyang Technological University, Center for Micro- and Nano-Electronics, School of Electrical and Electronic Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361) 
 Nanyang Technological University, School of Materials Science and Engineering, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361) 
 Nanyang Technological University, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Singapore, Singapore (GRID:grid.59025.3b) (ISNI:0000 0001 2224 0361) 
Publication year
2021
Publication date
Dec 2021
Publisher
Springer Nature B.V.
ISSN
23116706
e-ISSN
21505551
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2528312463
Copyright
© The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.