It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Magnetic Weyl semimetals are quantum phases of matter arising from the interplay of linearly dispersive bands, spin-orbit coupling, and time reversal symmetry breaking. This can be realised, for example, in Co3Sn2S2, based on a cobalt kagome lattice and characterised by intriguing phenomena such as large anomalous Hall effect, Nernst effect, and water oxidation. Here, we attempt to determine the robustness of the twofold necessary conditions for the emergence of the magnetic Weyl semimetal phase in Co3Sn2S2 ultrathin films. Except for two-dimensional layered materials, a reduction of thickness generally makes it difficult to develop topological character and ferromagnetic long-range order. In Co3Sn2S2 films, while ferromagnetic ordering appears robustly even in average thicknesses of one or two unit cells with island-like polycrystalline domains, the anomalous Hall conductivity appears only above a critical thickness of approximately 10 nm. The emergence of surface conduction and large anomalous Hall effect implies the distinct contribution of Weyl nodes and their Berry curvature. These findings reveal an exotic feature of Weyl physics in thin-film based superstructures as well as a potential for future applications in electronic devices.
The coexistence of ferromagnetism and topology has recently attracted intense interest. Here, the thickness dependence of magnetisation and anomalous Hall conductivity is investigated in Co3Sn2S2 thin films, revealing a critical thickness of 10 nm for the emergence of the magnetic Weyl semimetal phase.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details


1 Institute for Materials Research, Tohoku University, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943)
2 Institute for Materials Research, Tohoku University, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943); Tohoku University, Center for Spintronics Research Network (CSRN), Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943)
3 Institute for Materials Research, Tohoku University, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943); Tohoku University, Center for Spintronics Research Network (CSRN), Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943); Tohoku University, Center for Science and Innovation in Spintronics (CSIS), Core Research Cluster, Sendai, Japan (GRID:grid.69566.3a) (ISNI:0000 0001 2248 6943)