It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Highlights
MXene/WO3−x composite film with excellent electrochromic performances was fabricated for the first time.
The addition of MXene is an effective strategy for simultaneously enhancing electron and ion transport behaviors in the electrochromic layer.
The kinetics of ion diffusion in electrochromic devices are studied in depth based on both experiment and simulation.
Electrochromic technology plays a significant role in energy conservation, while its performance is greatly limited by the transport behavior of ions and electrons. Hence, an electrochromic system with overall excellent performances still need to be explored. Initially motivated by the high ionic and electronic conductivity of transition metal carbide or nitride (MXene), we design a feasible procedure to synthesize the MXene/WO3−x composite electrochromic film. The consequently boosted electrochromic performances prove that the addition of MXene is an effective strategy for simultaneously enhancing electrons and ions transport behavior in electrochromic layer. The MXene/WO3−x electrochromic device exhibits enhanced transmittance modulation and coloration efficiency (60.4%, 69.1 cm2 C−1), higher diffusion coefficient of Li+ and excellent cycling stability (200 cycles) over the pure WO3−x device. Meanwhile, numerical stimulation theoretically explores the mechanism and kinetics of the lithium ion diffusion, and proves the spatial and time distributions of higher Li+ concentration in MXene/WO3−x composite electrochromic layer. Both experiments and theoretical data reveal that the addition of MXene is effective to promote the transport kinetics of ions and electrons simultaneously and thus realizing a high-performance electrochromic device. This work opens new avenues for electrochromic materials design and deepens the study of kinetics mechanism of ion diffusion in electrochromic devices.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Xi’an Jiaotong University, State Key Laboratory for Mechanical Behavior of Materials, School of Material Science and Engineering, Xi’an, People’s Republic of China (GRID:grid.43169.39) (ISNI:0000 0001 0599 1243)
2 Xi’an Jiaotong University, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi’an, People’s Republic of China (GRID:grid.43169.39) (ISNI:0000 0001 0599 1243)
3 Southern University of Science and Technology, Department of Physics, Shenzhen, People’s Republic of China (GRID:grid.263817.9) (ISNI:0000 0004 1773 1790)
4 Xi’an Jiaotong University, School of Electronic and Information Engineering and State Key Laboratory for Mechanical Behavior of Materials, Xi’an, People’s Republic of China (GRID:grid.43169.39) (ISNI:0000 0001 0599 1243); Southern University of Science and Technology, Department of Materials Science and Engineering, Shenzhen, People’s Republic of China (GRID:grid.263817.9) (ISNI:0000 0004 1773 1790); Southern University of Science and Technology, Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Shenzhen, People’s Republic of China (GRID:grid.263817.9) (ISNI:0000 0004 1773 1790)