Abstract

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Details

Title
Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
Author
Dai Mingzhi 1   VIAFID ORCID Logo  ; Wang, Weiliang 2 ; Wang, Pengjun 3 ; Iqbal Muhammad Zahir 4 ; Annabi Nasim 5 ; Amin Nasir 6 

 Chinese Academy of Sciences, Ningbo Institute of Materials Technology and Engineering, Ningbo, China (GRID:grid.9227.e) (ISNI:0000000119573309) 
 Chinese Academy of Sciences, Ningbo Institute of Materials Technology and Engineering, Ningbo, China (GRID:grid.9227.e) (ISNI:0000000119573309); Ningbo University, Institute of Circuits and Systems, Ningbo, China (GRID:grid.203507.3) (ISNI:0000 0000 8950 5267) 
 Ningbo University, Institute of Circuits and Systems, Ningbo, China (GRID:grid.203507.3) (ISNI:0000 0000 8950 5267); Wenzhou University, College of Physics and Electronic Information Engineering, Wenzhou, China (GRID:grid.412899.f) (ISNI:0000 0000 9117 1462) 
 GIK Institute of Engineering Sciences & Technology, Topi, Pakistan (GRID:grid.412899.f) 
 Northeastern University, Department of Chemical Engineering, Boston, USA (GRID:grid.261112.7) (ISNI:0000 0001 2173 3359) 
 Government College University Faisalabad, Faisalabad, Pakistan (GRID:grid.411786.d) (ISNI:0000 0004 0637 891X) 
Publication year
2021
Publication date
2021
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2539745643
Copyright
© The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.