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Abstract
Heterobilayers of transition metal dichalcogenides (TMDCs) can form a moiré superlattice with flat minibands, which enables strong electron interaction and leads to various fascinating correlated states. These heterobilayers also host interlayer excitons in a type-II band alignment, in which optically excited electrons and holes reside on different layers but remain bound by the Coulomb interaction. Here we explore the unique setting of interlayer excitons interacting with strongly correlated electrons, and we show that the photoluminescence (PL) of interlayer excitons sensitively signals the onset of various correlated insulating states as the band filling is varied. When the system is in one of such states, the PL of interlayer excitons is relatively amplified at increased optical excitation power due to reduced mobility, and the valley polarization of interlayer excitons is enhanced. The moiré superlattice of the TMDC heterobilayer presents an exciting platform to engineer interlayer excitons through the periodic correlated electron states.
Heterobilayers of transition metal dichalcogenides host moiré superlattices that give rise to strong electron interactions. Here, the authors study the photoluminescence from interlayer excitons in a WS2/WSe2 heterobilayer to reveal the onset of various correlated insulating states.
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1 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198)
2 University of California, Department of Physics and Astronomy, Riverside, USA (GRID:grid.266097.c) (ISNI:0000 0001 2222 1582); University of California, Department of Materials Science and Engineering, Riverside, USA (GRID:grid.266097.c) (ISNI:0000 0001 2222 1582)
3 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); University of Electronic Science and Technology of China, Institute of Fundamental and Frontier Sciences, Chengdu, China (GRID:grid.54549.39) (ISNI:0000 0004 0369 4060)
4 Carnegie Mellon University, Department of Physics, Pittsburgh, USA (GRID:grid.147455.6) (ISNI:0000 0001 2097 0344)
5 Arizona State University, School for Engineering of Matter, Transport and Energy, Tempe, USA (GRID:grid.215654.1) (ISNI:0000 0001 2151 2636)
6 National Institute for Materials Science, Research Center for Functional Materials, Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880)
7 National Institute for Materials Science, International Center for Materials Nanoarchitectonics, Tsukuba, Japan (GRID:grid.21941.3f) (ISNI:0000 0001 0789 6880)
8 University of Electronic Science and Technology of China, Institute of Fundamental and Frontier Sciences, Chengdu, China (GRID:grid.54549.39) (ISNI:0000 0004 0369 4060)
9 University of California, Department of Physics and Astronomy, Riverside, USA (GRID:grid.266097.c) (ISNI:0000 0001 2222 1582)
10 Rensselaer Polytechnic Institute, Department of Chemical and Biological Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198); Rensselaer Polytechnic Institute, Department of Electrical, Computer and Systems Engineering, Troy, USA (GRID:grid.33647.35) (ISNI:0000 0001 2160 9198)