It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Here it is investigated the effect of the antiferromagnet Cr2O3 on the magnetic properties of ferromagnetic Fe72Ga28 thin films. Sputtered Fe72Ga28 layers have their magnetization in the sample plane with a magnetic fluctuation that gives rise to magnetic ripple. In order to turn its magnetization into the out of plane (OOP) direction, it has been magnetically coupled with Cr2O3 that has magnetic moments along the c-axis, that is the perpendicular direction when properly aligned. Cr2O3 has been obtained from Cr oxidation, whereas Fe72Ga28 has been deposited on top of it by sputtering in the ballistic regime. Although a uniaxial in-plane magnetic anisotropy is expected for Fe72Ga28 thickness above 100 nm, the interfacial coupling with Cr2O3 prevents this anisotropy. The formation of stripe domains in Fe72Ga28 above a critical thickness reveals the enhancement of the out of plane component of the Fe72Ga28 magnetization with respect to uncoupled layers. Due to the interface coupling, the Fe72Ga28 magnetization turns into the out-of-plane direction as its thickness is gradually reduced, and a perpendicular magnetic anisotropy of 3·106 erg·cm−3 is inferred from experimental results. Eventually, the coupling between Cr2O3 and Fe72Ga28 promotes an exchange-bias effect that has been well fitted by means of the random field model.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Universidad Complutense de Madrid, Dpto. Física de Materiales, Fac. CC. Físicas, Madrid, Spain (GRID:grid.4795.f) (ISNI:0000 0001 2157 7667)
2 Polytechnic University of Madrid (UPM), Institute for Optoelectronic Systems and Microtechnology (ISOM), Madrid, Spain (GRID:grid.5690.a) (ISNI:0000 0001 2151 2978)
3 Univ Castilla La Mancha, Inst Reg Invest Cient Aplicada IRICA, Dept Appl Phys, Ciudad Real, Spain (GRID:grid.8048.4) (ISNI:0000 0001 2194 2329)
4 Universidad Complutense de Madrid, Dpto. Física de Materiales, Fac. CC. Físicas, Madrid, Spain (GRID:grid.4795.f) (ISNI:0000 0001 2157 7667); Instituto de Magnetismo Aplicado, UCM-ADIF-CSIC, Las Rozas, Spain (GRID:grid.4795.f)