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Abstract
The paper presents the method of plasma-assisted deposition of AlMgB14 films in a discharge system that consisted of a large volume gas plasma generator with a thermionic and a hollow cathode. An electrode with a BAM powder was placed in plasma. High-frequency voltage of 13.56 MHz was applied to the electrode with a BAM powder. In contrast to traditional RF magnetron deposition, the use of the discharge system made it possible to significantly increase the deposition rate for BAM films and reduce the pressure of the working gas. The modes of plasma generation and the properties of the films were investigated.
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Details
1 Institute of High Current Electronics SB RAS, Tomsk, Russia
2 National Research Tomsk State University, Tomsk, Russia