Abstract

Graphene is a valuable 2D platform for plasmonics as illustrated in recent THz and mid-infrared optics experiments. These high-energy plasmons however, couple to the dielectric surface modes giving rise to hybrid plasmon-polariton excitations. Ultra-long wavelengths address the low energy end of the plasmon spectrum, in the GHz–THz electronic domain, where intrinsic graphene Dirac plasmons are essentially decoupled from their environment. However experiments are elusive due to the damping by ohmic losses at low frequencies. We demonstrate here a plasma resonance capacitor (PRC) using hexagonal boron-nitride (hBN) encapsulated graphene at cryogenic temperatures in the near-ballistic regime. We report on a 100 μm quarter-wave plasmon mode, at 40 GHz, with a quality factor Q ≃ 2. The accuracy of the resonant technique yields a precise determination of the electronic compressibility and kinetic inductance, allowing to assess residual deviations from intrinsic Dirac plasmonics. Our GHz frequency capacitor experiment constitutes a first step towards the demonstration of plasma resonance transistors for microwave detection in the sub-THz domain for wireless communication and sensing. It also paves the way to the realization of doping-modulated superlattices where plasmon propagation is controlled by Klein tunneling.

Details

Title
Ultra-long wavelength Dirac plasmons in graphene capacitors
Author
Graef, H 1   VIAFID ORCID Logo  ; Mele, D 2   VIAFID ORCID Logo  ; Rosticher, M 2 ; Banszerus, L 3   VIAFID ORCID Logo  ; Stampfer, C 3   VIAFID ORCID Logo  ; Taniguchi, T 4   VIAFID ORCID Logo  ; Watanabe, K 4   VIAFID ORCID Logo  ; Bocquillon, E 2   VIAFID ORCID Logo  ; Fève, G 2   VIAFID ORCID Logo  ; J-M Berroir 2   VIAFID ORCID Logo  ; Teo, E H T 5   VIAFID ORCID Logo  ; Plaçais, B 2   VIAFID ORCID Logo 

 Laboratoire Pierre Aigrain, Ecole Normale Supérieure, PSL University, Sorbonne Université, Université Paris Diderot, Sorbonne Paris Cité, CNRS, 24 rue Lhomond, F-75005 Paris, France; CINTRA, UMI 3288, CNRS/NTU/Thales, Research Techno Plaza, 50 Nanyang Drive, 637553, Singapore; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore 
 Laboratoire Pierre Aigrain, Ecole Normale Supérieure, PSL University, Sorbonne Université, Université Paris Diderot, Sorbonne Paris Cité, CNRS, 24 rue Lhomond, F-75005 Paris, France 
 JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, D-52056 Aachen, Germany 
 Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan 
 School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore 
Publication year
2018
Publication date
Dec 2018
Publisher
IOP Publishing
e-ISSN
25157639
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2546961439
Copyright
© 2018. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.