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Abstract
Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural inhomogeneities. Here we theoretically explore how a random, yet homogeneous, distribution of zigzag-edged triangular perforations can generate spatial anisotropies in both charge and spin transport. Anisotropic electronic transport is found to persist under considerable disordering of the perforation edges, suggesting its viability under realistic experimental conditions. Furthermore, controlling the relative orientation of perforations enables spin filtering of the transmitted electrons, resulting in a half-metallic anisotropic transport regime. Our findings point towards a co-integration of charge and spin control in a two-dimensional platform of relevance for nanocircuit design. We further highlight how geometrical effects allow finite samples to display finite transverse resistances, reminiscent of Spin Hall effects, in the absence of any bulk fingerprints of such mechanisms, and explore the underlying symmetries behind this behaviour.
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1 Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark; DTU Compute, Department of Applied Mathematics and Computer Science, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
2 Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, E-08193 Barcelona (Cerdanyola del Vallès), Spain
3 Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
4 Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, E-08193 Barcelona (Cerdanyola del Vallès), Spain; ICREA, Institució Catalana de Recerca i Estudis Avançats, E-08070 Barcelona, Spain
5 Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, E-08193 Barcelona (Cerdanyola del Vallès), Spain; Universitat Autònoma de Barcelona, E-08193 Bellaterra (Cerdanyola del Vallès), Spain