Abstract

Kesterite semiconductors, derived from the mineral Cu2(Zn,Fe)SnS4, adopt superstructures of the zincblende archetype. This family of semiconductors is chemically flexible with the possibility to tune the physical properties over a large range by modifying the chemical composition, while preserving the same structural backbone. In the simplest case, three metals (e.g. Cu, Zn and Sn) occupy the cation sublattice, which gives rise to a range of competing orderings (polymorphs) and the possibility for order–disorder transitions. The rich physics of the sulphide, selenide, and mixed-anion materials make them attractive for computer simulations in order to provide deeper insights and to direct experiments to the most promising material combinations and processing regimes. This topical review assesses the status of first-principles electronic structure calculations, optical modelling, and photovoltaic device simulations of kesterite semiconductors. Recent progress is discussed, and immediate challenges are outlined, in particular towards overcoming the voltage deficit in Cu2ZnSnS4 and Cu2ZnSnSe4 solar cells.

Details

Title
Status of materials and device modelling for kesterite solar cells
Author
Hood, Samantha N 1   VIAFID ORCID Logo  ; Walsh, Aron 2   VIAFID ORCID Logo  ; Persson, Clas 3   VIAFID ORCID Logo  ; Iordanidou, Konstantina 4 ; Huang, Dan 5 ; Kumar, Mukesh 6   VIAFID ORCID Logo  ; Jehl, Zacharie 7 ; Courel, Maykel 8   VIAFID ORCID Logo  ; Lauwaert, Johan 9 ; Lee, Sanghyun 10 

 Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom 
 Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea 
 University of Oslo, Department of Physics, Oslo, 0316, Norway; KTH Royal Institute of Technology, Department of Materials Science and Engineering, Stockholm, 10044, Sweden 
 University of Oslo, Department of Physics, Oslo, 0316, Norway 
 Guangxi University, School of Physical Science and Technology and Guangxi Key Laboratory of Processing for Non-Ferrous Metallic and Featured Materials, Nanning, 530004, People’s Republic of China 
 School of Physics and Materials Science, Thapar Institute of Engineering and Technology, Patiala, Punjab, 147004, India 
 Institut de Recerca en Energia de Catalunya (IREC), Jardins de les Dones de Negre, 1, 2ª pl., 08930 Sant Adrià de Besòs, Barcelona, Spain 
 Centro Universitario de los Valles (CUValles), Universidad de Guadalajara, Carretera Guadalajara-Ameca Km. 45.5, C.P. 46600, Ameca, Jalisco, Mexico 
 Department of Electronics and Information Systems, Ghent University, Zwijnaarde B-9052, Belgium 
10  Department of Electronics and Computer Engineering Technology, Indiana State University, Terre Haute, IN, 47809, United States of America 
Publication year
2019
Publication date
Oct 2019
Publisher
IOP Publishing
e-ISSN
25157655
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2547647643
Copyright
© 2019. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.