Abstract

For solid-state spin qubits, single-gate rf readout can minimize the number of gates required for scale-up since the readout sensor can integrate into the existing gates used to manipulate the qubits. However, state-of-the-art topological error correction codes benefit from the ability to resolve the qubit state within a single shot, that is, without repeated measurements. Here, we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of 82.9% at 3.3 kHz measurement bandwidth. We use this technique to measure a tripletT−to singletS0relaxation time of 0.62 ms in precision donor quantum dots in silicon. We also show that the use of rf readout does not impact the spin lifetimes (S0toT−decay remained approximately 2 ms at zero detuning). This establishes single-gate sensing as a viable readout method for spin qubits.

Alternate abstract:

Plain Language Summary

Quantum bits (or qubits) made from single atoms in semiconductors are a promising platform for large-scale quantum computers, thanks to their long-lasting stability. To perform logic operations, two atom-size qubits must be placed very close together, which makes it challenging to squeeze in all the electrodes and sensors needed for qubit control and readout. One solution is to use the control electrodes not only for qubit manipulation but also for sensing the state of the qubit spin state by applying a small oscillating radio frequency (rf) electric field to the electrode. However, the sensitivity has not yet been high enough to measure electron spin states in real time. Here, we demonstrate a paradigm shift for scaling up semiconductor qubits that allows one to read an electron spin with one measurement (aka “single shot”) without the need to repeat the experiment and average the outcomes.

In our approach, an rf signal attempts to move pairs of electrons between dots, but this motion is only possible for certain combinations of electron spins. If the attempt is successful, the motion of charge drives a signal in a resonator attached to one of the gates. We show that this approach allows us to sense the spin state in a single shot with readout fidelities of 82%, and it does so without affecting the spin dynamics during the measurement.

This demonstration confirms that single-gate rf sensing of electron spins is reaching the sensitivity required to perform the necessary quantum error correction in a scalable quantum computer.

Details

Title
Single-Shot Single-Gate rf Spin Readout in Silicon
Author
Pakkiam, P; Timofeev, A V; House, M G; Hogg, M R; Kobayashi, T; Koch, M; Rogge, S; Simmons, M Y
Publication year
2018
Publication date
Oct-Dec 2018
Publisher
American Physical Society
e-ISSN
21603308
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2550614256
Copyright
© 2018. This work is licensed under https://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.