Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors

Abstract

The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectricα−GeTeand multiferroicGe1−xMnxTe. We demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal. Additionally, we are also able to follow the switching pathway in detail. In multiferroicGe1−xMnxTeoperando SARPES reveals switching of the perpendicular spin component due to electric-field-induced magnetization reversal. This provides firm evidence of magnetoelectric coupling which opens up functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching intertwined with Rashba-Zeeman splitting in a multiferroic system.

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Plain Language Summary

Spintronics devices exploit the spins of electrons, as opposed to traditional electronics, which rely solely on electric charges. One key requirement for programmable spintronic devices is the ability to manipulate spins in certain materials via external electric or magnetic fields. We demonstrate the ability to control the spin landscape using electric fields in a new class of materials based on germanium telluride, the simplest ferroelectric operating at room temperature.

Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate electrostatic spin manipulation in ferroelectricα−GeTeand multiferroic (GeMn)Te. Additionally, we are able to follow the switching pathway in detail. In (GeMn)Te, the perpendicular spin component switches as a result of electric-field-induced magnetization reversal. This provides firm evidence of magnetoelectric coupling, which opens up functionality with a multitude of spin-switching paths.

Previously, we have shown that magnetic fields can control spins in these materials. And now we show that spin manipulation is also possible using electric fields. Our experimental findings open up a promising path toward robust and programmable semiconductor-based spintronics functionally coupled to electronic and magnetic properties.