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Abstract
The dependence of the carrier-induced degradation on the temperature and irradiance is studied. The stability of samples after accelerated degradation and regeneration at different temperature and irradiance are studied also. Minority carrier lifetime and normalized defect density are used to characterize the degradation and regeneration kinetics. The mechanism of temperature and irradiance on degradation is studied and discussed.
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1 The Key Laboratory of Solar Thermal Energy and Photovoltaic System, IEE-CAS, No. 6 Beiertiao Zhongguancun, Haidian District, Beijing, China; University of Chinese Academy of Sciences, No. 19 Yuquan Road, Shijingshan District, Beijing, China
2 The Key Laboratory of Solar Thermal Energy and Photovoltaic System, IEE-CAS, No. 6 Beiertiao Zhongguancun, Haidian District, Beijing, China