It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
The widespread use of diamond in electronics, photonics and other fields of science and technology is currently constrained by the possibility of obtaining high-quality material – polycrystalline diamond CVD-films on silicon, molybdenum, copper and other materials, as well as a small deposition area. Substrates special pretreatment will allow solving both problems. This paper presents the results of the synthesis of several types of polycrystalline diamond film (light-gray, gray and dark-gray) on a modified silicon substrate. We discuss the technical aspects of modifying silicon substrate surface and the synthesis parameters of each type of film. The results obtained in this work allow in the future significantly increase the geometric dimensions of deposited diamond films without reducing their quality, which will make it possible to use them as optical windows.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 National University of Science and Technology “MISIS”, Leninsky Avenue, 4, Moscow, 119049, Russia