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Abstract
In this paper we examine the possibility to simulate and study the behaviour of a fiber-based Textile Transistor in a commercial TCAD system. We also examine the capability of such transistors to operate in sufficiently low voltages, aiming to the potential realization of low-voltage wearable textiles in the future. We have seen that it is potentially feasible to build transistors which can operate in low voltages by using typical materials. Even if some of the selected typical materials have to be replaced by others more suitable for practical use in the textile industry, the simulation is a good starting point for estimating the device typical operation and parameters.
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Details
1 Aristotle University of Thessaloniki, School of Physics, Department of Solid State Physics, University Campus, 54124, Thessaloniki, Greece; Piraeus University of Applied Sciences, School of Engineering, Department of Textile Engineering, 250 Thivon & P. Ralli Str., 12244, Egaleo, Greece
2 Aristotle University of Thessaloniki, School of Physics, Department of Solid State Physics, University Campus, 54124, Thessaloniki, Greece
3 Piraeus University of Applied Sciences, School of Engineering, Department of Textile Engineering, 250 Thivon & P. Ralli Str., 12244, Egaleo, Greece
4 Ghent University, Faculty of Engineering and Architecture, Department of Textiles, Technologiepark 907, 9052 Zwijnaarde (Gent), Belgium