Abstract

Photoluminescence (PL) polarization was experimentally studied for the samples with thick InGaAs epitaxial layers with different concentrations of donors in the transverse magnetic field (the Hanle effect). A well-pronounced W-structure observed in the set of samples under study indicate a strong electron-nuclear spin interaction. Analysis of the Hanle curves measured at different pumping powers provided important parameters of the electron-nuclear spin system, such as the Knight field and kinetic local field. We obtained characteristic values of the electron spin relaxation time by modeling the Hanle curves measured with fast modulation of the excitation polarization at different pumping powers,.

Details

Title
Strongly-coupled electron and nuclear spin systems in InGaAs epilayers
Author
Evdokimov, A E 1 ; Kuznetsova, M S 1 ; M Yu Petrov 1 ; Potekhin, R A 1 ; Efimov, Yu P 2 ; Eliseev, S A 2 ; Lovtcius, V A 2 ; P Yu Shapochkin 2 

 Spin Optics Laboratory, Saint Petersburg State University, St. Petersburg, Russia 
 Saint Petersburg State University, St. Petersburg, Russia 
Publication year
2019
Publication date
Mar 2019
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2566102555
Copyright
© 2019. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.