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Abstract
A heterostructure for resonant-cavity p-i-n photodiode was grown by molecular beam epitaxy and consists of light-absorbing GaAs i-layer between p- and n-emitter layers of AlGaAs. The heterostructure employs Bragg reflector with more than 95 % reflection coefficient at 840-860 nm wavelength. Photolithographic masks for chip fabrication were designed using optoelectronic and thermal phenomena simulation. Fabricated chips exhibit a bandwidth of 10 GHz and low dark current.
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Details
1 ITMO University, St. Petersburg, 197101, Russia
2 Yaroslav-the-Wise Novgorod State University, Veliky Novgorod, 173003, Russia
3 Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia
4 ITMO University, St. Petersburg, 197101, Russia; Connector Optics LLC, St. Petersburg 194292, Russia